Abstract
A study of the electron-hole conductivity in PbI2 single crystals doped with Hf (0.2 wt %) was conducted using the Wagner polarization cell method. The influence of the Hf alloying admixture (0.2 mass%) on the nature and parameters of lead diiodide’s electronic conductivity has been analyzed.
 Basing on the received current-potential dependences, p-type conductivity of a single crystal PbI2:Hf was established. The hole conductivity values (sро) were determined in the studied temperature range allowing to construct temperature dependence. The sро value for single crystal PbI2:Hf increased responsively to increasing temperature. For PbI2 and PbI2:Hf, a comparative analysis of the electron-hole conductivity was carried out. This investigation allowed determining the activation energy sро reduction from 0.47 eV to 0.32 eV due to hafnium doping. Consequently, the presence of Hf admixture in PbI2 crystals causes new impurity acceptor levels located at a distance of 0.64 eV from the upper limit of the valence zone.
Highlights
Lead diiodide (PbI2) crystals belong to a class of ionic semiconductors with a small fraction of the electron-hole conductivity component
Basing on the analysis of current-potential dependencies, it was found that the PbI2:Hf has a hole conductivity
The temperature dependence σро was obtained at temperature intervals 378 - 454 K
Summary
Lead diiodide (PbI2) crystals belong to a class of ionic semiconductors with a small fraction of the electron-hole conductivity component. These compounds can be applied in medical devices, as sensitive elements of detection devices, including ionizing radiation detectors, and others. Despite the increased scientific interest in PbI2, its electrophysical properties have not been studied sufficiently. The nature of charge carriers in PbI2 remains questioning, since the literature gives contradictory data on the nature and parameters of electrical conductivity. This phenomenon can be explained by differences in experimental methods [1215]
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