Investigation of electron processes at the p and n type Si(111) real surface by the surface photovoltage method

Abstract

The surface photovoltage Δ V s, and photoconductivity Δσ versus temperature (in the range of 300–430 K), and also versus energy and intensity of light are measured for p and n type Si(111) surfaces, after chemical etching in HF solution and baking in vacuum. From the dependence of the surface potential V s and the surface photovoltage Δ V s on the surface Fermi level position Φ s we find the character of the surface state distribution is not dependent on the type of bulk doping but only on the technology involved in the surface preparation. This fact is supported by the theoretical calculations of Δ V s versus Φ s based on the Lile model, with the assumption of the existence of acceptor and donor surface states.