Abstract
Direct vapor phase synthesis technique was used to grow the bulk InxMo1-xS2 (x = 0, 0.05, 0.1). The grown material has hexagonal structure with P63/mmc space group. Electron-Phonon interaction in bulk InxMo1-xS2 (x = 0, 0.05, 0.1) were studied using Raman spectroscopy. First order mode i.e. A1g and E2g and second order mode i.e. b-mode were observed in bulk InxMo1-xS2 (x = 0, 0.05, 0.1) crystals. Temperature dependent Raman spectroscopy over the temperature range -180 °C to 240 °C shows the peak shifting. The higher sulfur void in bulk MoS2 as corelate to that of indium doped MoS2was responsible for excessive electron concentration. This study was supported by Energy Dispersive Analysis of X-ray (EDAX) and powder X-ray Diffraction (XRD) on bulk InxMo1-xS2 (x = 0, 0.05, 0.1).
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