Abstract
Abstract The change of the diffuse scattering intensity near (OO.h) and (hO.O) Bragg reflections and the electrical resistivity change were investigated at single crystals of cadmium after electron-irradiations (3 MeV) at 4.5 K. Even for the lowest irradiation dose no isolated interstitials but interstitial agglomerates were found at 6K. Their size grew with increasing irradiation dose from 6 (Δρ = 14 nΩm) to 9 (Δρ = 25 nΩm) interstitials per agglomerate. During recovery stage II (to ∼ 100 K.) their size further increased by a factor of about 1.5. These clusters seemed to approach the form of dislocation loops on the basal plane. At the end of stage HI (∼ 145 K) there were indications for the formation of vacancy agglomerates.
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