Abstract
The Si2Sb2Te5 phase change material for applications of chalcogenide random access memory was investigated. Electron irradiation induced crystallization in a nano-sized area was studied by means of in situ transmission electron microscopy and selected area electron diffraction. Amorphous Si2Sb2Te5 film changes to a polycrystalline state after electron beam exposure with sufficiently high energy and after a long time. Crystallization of the film strongly depends on the electron beam energy, current density, as well as exposure time. According to our study, the electron beam induced crystallization is a displacement damage dominant process.
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