Abstract
It is known that electromagnetic interference (EMI) has a negative effect upon the performance of electronic communication systems. The present study considers the case, where EMI is induced in an conducting wire (CW), and derives equations to establish the influence of the induced EMI on InGaN material of nanometer quantum well light-emitting diodes (LED). These equations are then verified experimentally. The present results indicate that the degree of influence of the EMI upon the InGaN LED device depends upon the interference power, the interference frequency, the induced power, the input resistance of the device, the inverse saturation currents, and the ideal factor of the LED. Moreover, the greater EMI amplitude and frequency, the greater deterioration I–V curves of the InGaN LED.
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