Abstract
Deep level transient spectroscopy (DLTS) and minority carrier transient spectroscopy (MCTS) are used to investigate electrically active defects in commercial SiC Schottky power diodes after heavy-ion microbeam irradiation at different voltages. The DLTS and MCTS spectra of pristine samples are analysed and compared to devices showing or not signatures of Single Event Leakage Current (SELC) degradation. An additional peak labelled ‘C’ with an activation energy of 0.17 eV below the conduction band edge is observed in the DLTS spectra of a sample degraded with SELC.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Published version (
Free)
Free) 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
