Abstract
Room-temperature (30 °C) silicon dioxide (SiO2) has been grown on strained SiGe layers by liquid-phase deposition (LPD). Metal–oxide–semiconductor (MOS) capacitors have also been fabricated by annealing at various temperatures (200–400 °C) in nitrogen. A very low leakage current density of 3.25×10-8 A/cm2 was obtained at an electric field of 10 MV/cm for as-grown LPD-SiO2 films. After annealing, the leakage current density decreased by one order of magnitude and the fixed oxide charge density also significantly decreased to 4.7×109 cm-2 in the capacitor annealed at 400 °C. The mechanism by which this occurred is explained.
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