Abstract
MIM devices fabricated with 10-nm thickness of Al2O3 high-[Formula: see text] thin film deposited using plasma-enhanced atomic layer deposition (PEALD) system on Al-coated Si substrate were investigated. The structural, morphological and electrical properties of Ti/Al2O3/Al/Si MIM capacitors as-deposited and post-deposition annealed (PDA) at different temperatures were studied and compared. Al2O3 thin films were investigated using atomic force microscopy (AFM) and X-ray diffraction (XRD) and Ti/Al2O3/Al/Si MIM capacitors were characterized by current–voltage ([Formula: see text]–[Formula: see text] and capacitance–voltage ([Formula: see text]–[Formula: see text] measurements. The stable phase formation of Ti/Al2O3/Al/Si MIM capacitor provides the lowest leakage current density in the range of nA/cm2 for as-deposited and annealed films.
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