Abstract
Evaporated multilayer sandwich structure of Au/NiPc/Al was fabricated by thermal evaporation technique. The electrical conductivity of Au/NiPc/Al device has been measured both as prepared and after annealing at 623 K for 2 h. Under forward bias conditions, ohmic and SCLC conductions were identified at low and higher voltages respectively. After annealing, a strong rectifying effect was observed. The potential barrier height and the depletion region width for annealed sample were calculated as 0.96 eV and 70 nm, respectively. Hole and trap parameters for as prepared and after annealing devices, also, were evaluated.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
