Abstract
In this study, structural and electrical properties of Ag/TiO2/n-InP/Au Schottky barrier diodes, constructed with sputtering method on n-InP wafer, are investigated. Particle size, d- spacing, micro-strain, ideality factor and barrier heights of two samples are determined for two different interfacial TiO2 layer thickness. Thickness of TiO2 interfacial layers are adjusted as 60 A and 120 A. X-ray diffraction (XRD) and current-voltage (I-V) measurements are employed for mentioned parameters. It is seen that sample with 60 A TiO2 interfacial layer is a more ideal diode. It is seen that as thickness of TiO2 interface decrease Ag/TiO2/n-InP Schottky diode becomes more ideal. This result is explained in main text in connection with series resistance, difference between d-spacings of interface and wafer. Comments on relation of lattice mismatch with series resistance are also made.
Highlights
Investigation of electric and structural properties of solid-state materials started in the beginning of 1800s
2- Steps during cleaning of iron mask, tweezers and wafers (n-InP) are given below: a- Washing in ultrasonic bath with triclor etile for 5 minutes. b- Rinsing with DIW c- Washing in ultrasonic bath with acetone for 5 minutes. d- Rinsing with DIW
X-ray analysis of both samples are made with Bruker D8-Discover HRXRD device that contains Ge(220) oriented four crystal monocromator and X-ray source tube that produce 1.540 Å CuKα1 wavelength X-rays. w- 2θ scanning of both samples are made for (002) plane
Summary
Investigation of electric and structural properties of solid-state materials started in the beginning of 1800s. By adding different type of materials and combining doped semiconductors with different properties, diodes and transistors are constructed These devices are fundamentals of modern electronics. As a result of these passivations more optimised surfaces are gained[5] After these experiments contact studies with InP semiconductors are made by forming an interface layer between metal and semiconductor layers[6]. TiO2 (Titannium di oxide) is a metal oxide formed by combination of Ti(Titannium) and oxygen It is used in optic applications with its wide band gap (3 eV) and high refractive index (n=2.3).It is frequently used in solar panels, self-cleaning surfaces, treatment of cancer, photovoltaic devices. In this study TiO2 is used as interface layer Both structural and electric properties of Ag/TiO2/nInP/Au Schottky barrier diode are investigated
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