Abstract
4,4-Difluoro-4-bora-3a,4a-diaza-s-indacene (BODIPY) based BOD-Z-EN compound was used as an interfacial organic layer to fabrication of Au/BOD-Z-EN/n-Si/In diode. The electrical parameters of Au/BOD-Z-EN/n-Si/In diode such as ideality factor (n), barrier height (Φb) and series resistance (Rs) have been investigated through current–voltage (I–V) studies at dark and under various illumination intensities to understand the effect of interlayer on the device properties. The values found for the n varied from 2.33 to 1.55 and the Φb ranged from 0.86 to 0.90 eV as the illumination condition changed from dark to 100 mW/cm2. Series resistance (Rs) values calculated using Cheung’s method were found to decrease with increasing illumination level. The forward bias I–V characteristics of the diode were explained by the space charge limited current theory. The main photovoltaic parameters such as open circuit voltage (Voc), short circuit current density (Jsc) and fill factor (FF) were determined for various light intensity. The Au/BOD-Z-EN/n-Si/In diode exhibits a photovoltaic behavior with a Voc of 150 mV and Jsc of 10 µA/cm2 under 100 mw/cm2. In addition, photosensitivity and photoresponsivity properties of the diode were determined. All these results indicate that Au/BOD-Z-EN/n-Si/In device can be used as photosensor in optoelectronic applications.
Highlights
Organic materials have been intensively considered as alternatives to conventional inorganic materials in the manufacture of various types of electronics devices because of their several advantages such as low cost, ease of production processes, chemical stability and compatibility with large area applications [1,2,3]
The aim of this study is to investigate the effect of the BOD-Z-EN as an organic interfacial layer on main electronic parameters of device
First of all, we performed density functional theory (DFT) calculations at the B3LYP/6-31G(d,p) level to investigate position and spatial distribution of the energy levels of highest occupied molecular orbital (HOMO) and lowest unoccupied molecular orbital (LUMO) that are responsible for the electronic properties of BOD-Z-EN [25, 26]
Summary
Organic materials have been intensively considered as alternatives to conventional inorganic materials in the manufacture of various types of electronics devices because of their several advantages such as low cost, ease of production processes, chemical stability and compatibility with large area applications [1,2,3]. One of the most popular fluorescent dyes used in the literature over the past two decades is BODIPY (4,4-difluoro-4-bora-3a, 4a-diaza-s-indacene) Due to their excellent photophysical properties such as high absorption coefficient, fluorescence quantum efficiency and long excited state, BODIPY based pconjugated structures have been attractive in terms of development of organic semiconductors [19,20,21]. Despite the interest in the excellent photophysical properties of BODIPY dyes, there are only a few studies characterizing the electronic parameters of Schottky diodes using BODIPY based compounds as an organic interfacial layer. Studies investigating the electrical and optical characterizations of BODIPY compounds are still needed to investigate possible potentials of using BODIPY compounds in optoelectronic applications Based on these concerns, in this study, we synthesized is a highly pconjugated BODIPY derivative (BOD-Z-EN) according to literature [24] (Fig. 1). The aim of this study is to investigate the effect of the BOD-Z-EN as an organic interfacial layer on main electronic parameters of device
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