Abstract
Indium oxide (In2O3) films were deposited by reactive sputtering using an indium target in the presence of oxygen and argon as sputtering gases. The electrical and optical properties of In2O3 films specifically sheet resistance, resistivity, optical transparency, refractive index, and optical bandgap were investigated as a function of oxygen gas flow ratio, keeping the substrate at room temperature. The lowest reported resistivity in this study is 2 x 10-3 Ω-cm. The optical transmission was more than 80% in the wavelengths of 400 nm to 800 nm. The optical study revealed the wide optical bandgap of 3.875 eV of the deposited In2O3 films. The films showed refractive indices in the range of 1.99 to 2.22. The elemental composition of In2O3 films has been studied through X-ray Photoelectron Spectroscopy (XPS).
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