Investigation of Electrical and Dielectrically Properties of a Novel Structure of PANI-PPy--GO-MWCNTs Composite/MnO2/Fe3O4/n-Si Structure

Abstract

We investigated here the electrical properties of the novel structure of PANI-PPy-GO-MWCNTs composite/MnO2/Fe3O4/n-Si. This structure has not been addressed in literature before, the manufacture of this novel structure is carried out using a simple technique. So, we introduce here a novel structure with a simple method of manufacture. The imaginary part of modulus M″ has two behaviors, the first behavior at high and low frequency and the second behavior at mid frequency, so the M″ gives two contrarian behaviors, The M″ is a strong function of frequency and we can change the behavior of M″ by change of frequencies. The Col—Col diagram of modulus has ideal figures at some voltages including two semicircles of grains and grain boundaries. The imaginary part of impedance Z″ vs frequency creates peaks, the peaks shift toward the low frequencies. The novel here the Z″ has positive and negative values, despite the Z″ should have negative values only. The real part of impedance Z″ keeps on without change at high frequencies and splits for all temperatures at low and mid frequencies. Some electrical properties such as barrier height ɸb,Wd the width of the depletion layer, Nss the density of states, and acceptor carrier concentration Na were obtained by C—V2. All these parameters were strong functions of frequency.