Investigation of e-h Trapping Efficiency in Eu3+ Doped YPO4 Using VUV Spectroscopy

Abstract

Absorption of Vacuum Ultraviolet (VUV) radiation creates excited e – h pairs in rare – earth doped phosphors that can either be trapped by a defect state (killer) or Ln3+ activator. The e – h trapping efficiency by Ln3+ is proportional to the rate of transfer to the activators. Recent work on YBO3:Eu3+ nano-sized particles indicate that with decreasing particle size, there is an increase in loss of energy to surface states [1]. Micron-sized Ln3+ doped YBO3 particles seem to have no surface loss effects. Our ultimate goal is to study particle size effects on surface loss and trapping efficiency in Ln3+ doped phosphor compounds. To develop a point of reference for surface loss and trapping efficiency for other nano-sized Ln3+ doped phosphor compounds, the corresponding micron-sized phosphors must be analyzed first. Thus, the e - h trapping efficiencies under VUV excitation have been determined from absorbance and excitation spectra for micron-sized Ln3+ doped YBO3, YPO4, and LaPO4. Several of these phosphor compounds contain multiple d(Ln3+) and or a Ln2+ - charge transfer (CT) state in the band gap for e - h trapping to occur. For a single CT strap state, a unique method for estimating the transfer efficiency under VUV excitation has been developed [2], and we have recently proposed a method to determine transfer efficiencies under VUV excitation for each of the individual trap states for Ln3+ doped phosphor compounds that contain multiple trap states [3]. Treating these data using accepted kinetic models allows us to calculate relative trapping efficiencies as well as the degree of surface loss. To understand the trapping mechanism, the Ln3+ energy levels relative to host states must be taken into consideration. We have developed an energy level scheme of Ln2+ and Ln3+ ground states relative to the valence band maximum (VBM) of Ln3+ doped compounds using techniques proposed by Dorenbos and Thiel [4,5,6]. Results indicate that if the Ln3+ ground state is higher in energy than the VBM, and d – orbitals are in the band gap, e - h trapping by the activator will form a 5d(Ln3+) state. The e - h trapping efficiency shows a positive linear correlation with the energy difference of the Ln3+ ground state and VBM. That is, the observed trapping efficiency appears to be dictated by hole trapping efficiency of the Ln3+ ground state for the corresponding activators. For the activators with the Ln3+ ground state approximately equivalent to or lower in energy relative to the VBM, and a Ln2+ ground state CT that is in the band gap, a linear correlation is observed between the trapping efficiency and the difference in energy between the CT state and conduction band edge (CBE). In this case, a CT state is formed and the trapping efficiency must be dictated by the electron trapping efficiency for the corresponding activator. Having completed a preliminary study of the micron – sized materials, data will be presented on our studies of surface loss effects in the nano – sized materials.