Abstract
In this paper, an inverter composed of semi-floating gate (SFG) transistor and a load resistor was analyzed. Varying threshold voltage $(V_{\mathrm {th}})$ during switching was observed. This dynamic $V_{\mathrm {th}}$ behavior of SFG device is because of the special device structure of SFG transistors. Based on the $V_{\mathrm {th}}$ -programmable behavior of the SFG transistor, a SFG-based GaN high electron mobility transistor was proposed and enhancement-mode was realized with writing-0 into the transistor during every switching operation by simulation.
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