Abstract
The current collapse and hot electron effect of 100 V normally-off GaN power HEMTs are investigated. The 100 V GaN-on-Si power HEMTs are fabricated on an industrial 200 mm Si CMOS compatible technology platform. The double pulse test (DPT) and the dynamic high temperature operating life (DHTOL) test are implemented to verify the dynamic on-resistance (dynamic Ron) stability. Wafer level hot electron reliability test is performed to investigate the effect of high electric field and high current on GaN power HEMT. It is proved that the dynamic Ron stability of 100 V GaN power HEMT is qualified (Ron/Rini, static < 1.2) when the drain-source off-state voltage (Vdsoff) is less than 80 V. It is shown that the dynamic Ron degradation of GaN device is recoverable by means of annealing. Hot electrons reliability is dominated by the high electric field at drain edge and the high current which is source injected electrons flowing to the drain. It is demonstrated that the Vth drift and Ron degradation are extraordinary serious under semi on-state stress condition with Vdsoff = 60 V.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
