Abstract

Electrical properties of various GaAs–AlAs short period superlattices uniformly doped with silicon are investigated. Hydrostatic pressure is used to capture electrons from the conduction miniband onto the deep donor states associated with the large lattice relaxation of the Si donor in GaAs, AlAs, and at the GaAs–AlAs interface. The ionization energies and densities of different deep donors are determined. We find that a two-band model of conduction, assuming the existence of three donor states (discrete structure of the Si-DX center), accounts for the Hall data in all samples. Application of hydrostatic pressure allows us to vary the miniband energy in some samples and leads to improved determination of the donor energies and concentrations. When the AlAs growth rate is half of the GaAs growth rate, the fraction of DX states decreases in AlAs, whereas the fraction of DX states increases at the interface indicating a strong Ga/Al cation exchange across the interface.

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