Investigation of dwell-time effects on the cobalt disilicide formation using focused ion beam implantation

Abstract

The influence of dwell-time effects on the formation of CoSi 2 layers was investigated. The layers were produced on Si(111) and Si(100) by ion beam synthesis using a focused ion beam system. The experiments show that the dwell-time has a strong influence on the formation process of the cobalt disilicide films. In order to obtain high quality films suitable for applications short dwell-times (about 1 μs) are necessary.