Investigation of double-delta-doped InAlGaP/GaAs/InGaAs field effect transistors

Abstract

The double-delta-doped In 0.5(Al 0.7Ga 0.3) 0.5P/GaAs/In 0.3Ga 0.7As field-effect transistors (FETs) epitaxial layers were grown on (1 0 0)-oriented semi-insulating GaAs substrate using low-pressure metalorganic chemical vapor deposition system. To study the characteristics of the FETs with and without illuminating of laser beams of various wavelengths, we find that both I DS– V DS characteristics and g m– V GS characteristics have not been affected by the excitation for the laser beam of the wavelength 841 and 1324 nm; while a slightly influence for the 632.8 nm laser beam. We also study the high frequency response of the fabricated devices.