Abstract
We have studied experimentally the current-voltage characteristics of double-barrier Nb-Al-AlO/sub x/-Al-AlO/sub x/-(Al-)Nb junctions exposed to microwave radiation at 4.2 K. Both integer and fractional Shapiro steps were observed. A complicated behavior of the step heights was observed as a function of both the microwave power and an applied magnetic field. Reasonable agreement with the RSJ model was obtained only for the steps 0 to 2 observed in current-voltage characteristics of the junctions with a clean middle Al layer. A deviation from RSJ-like behavior was found for higher-order integer steps and fractional steps. Devices with a dirty middle Al layer displayed more significant deviation from RSJ-like behavior. Step heights vs. magnetic field dependences in some cases were found to be qualitatively different from the field dependence of the dc Josephson current.
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