Investigation of Dislocations in 6H-SiC Axial Samples Using Synchrotron X-Ray Topography and Ray Tracing Simulation

Abstract

Wide bandgap semiconductor, 6H-SiC, is being applied in photoconductive semiconductor switches (PCSS) due to its semi-insulating properties. This material is normally insulating but when illuminated, charge carriers are pumped to the conduction band and the material becomes conductive in proportion to the light intensity. Under the application of voltage and laser, the density as well as the movement of the defects will have an impact on the performance of the device. Characterization and understanding the mechanism of this potentially destructive defect process is of great scientific interest as well to the development of the device. X-ray topography is a powerful, non-destructive technique for the characterization of extended defects in large, single crystals. In this study, threading edge dislocations (TED), threading screw dislocations (TSD) as well as basal plane dislocations (BPD) in 6H-SiC axial samples are revealed using synchrotron rocking curve topography, where the atomic structure information (Burgers vector) of these dislocations are investigated using ray tracing simulation. The understanding of the nature of these dislocations is of great importance as to predict their propagation and movement under the application of voltage and laser, and eventually helps to improve the performance of the device. Figure 1