Investigation Of Dielectric Relaxation In Se78-yTe20Sn2Cdy Chalcogenide Glasses

Abstract

Chalcogenide glasses (ChGs) have emerged as a focal point of scientific research over the past decade due to their wide-ranging applications in electronics, optics, optoelectronics, X-ray imaging, and photonics. These multifunctional materials have attracted significant attention for their potential use in amorphous semiconductor devices, such as optical DVDs, phase change memory devices for energy conservation, RAM, waveguides, optical fibers, and low-cost solar cells. ChGs exhibit unique structural and chemical disorders resulting from their lack of long-range order and inherent defects within the mobility gap. To harness these materials for practical applications, a comprehensive understanding of their electrical transport properties is essential.Conductivity in ChGs is typically characterized as p-type, stemming from the asymmetry between the conduction and valence bands. Understanding the role of structural and chemical disorders, particularly their impact on anti-bonding and non-bonding states, is crucial. Additionally, the dielectric properties of ChGs play a significant role in predicting structural information and identifying sources of electrical loss. Temperature and frequency-dependent dielectric studies offer insights into the conduction mechanism and defects in these materials.