Investigation of dielectric relaxation and a.c. conductivity of third generation multi-component Ge10−xSe60Te30Sbx (0 ≤ x ≤ 6) chalcogenide glasses

Abstract

The dielectric properties and thermally assisted conduction are the two essential phenomena which determine the suitability of prepared chalcogenide glasses for specific device applications. Chalcogenide glassy alloy of a-Ge10−xSe60Te30Sbx (0 ≤ x≤6) was prepared by melt quench technique. Dielectric analysis and mechanism of ac conduction have been studied for the novel multicomponent chalcogenide glasses at frequency and temperature range (100 Hz–1 MHz) and (303–328 K) respectively. It has been clearly observed that the value of both dielectric constant ( $$\upvarepsilon_{1}$$ ) and dielectric loss ( $$\upvarepsilon_{2}$$ ) decreases with increasing frequency and increases with increasing temperatures. The variation of dielectric constant with frequency and temperature was described by orientational polarization. The change in dielectric loss with frequency and temperature was interpreted by Guintini relation. The ac conductivity follows the universal power law ( $${\text{A}}\upomega^{\text{s}}$$ ) with frequency where the frequency exponent s ≤ 1 and it reduces with increase of temperature which confirms that the CBH model is best suited to describe the ac conductivity in the prepared glassy alloys. The change in dielectric constant, dielectric loss and a.c. conductivity with Sb doping was also examined.