Abstract

This communication reports a detail study on manganese (Mn) doping in CaCu3Ti4O12 (CCTO) ceramic (simultaneously doping copper and titanium site) with the help of X-ray Photoelectron Spectroscopy ( XPS), High Resolution - Scanning Electron Microscopy ( HR-SEM), High Resolution- Transmission Electron Microscopy (HR-TEM ) and Raman spectra. The doping of manganese in CCTO ceramic, the dielectric constant was largely decreased due to Mn exist variable oxidation state like Mn+2, Mn+3and Mn+4 due to this reason the grains (GB) and grain boundaries (GBs) slightly behave conducting nature. Raman spectra show the existence of copper oxide and manganese oxide presence in the grain and grain boundary of CaCu2.9Mn0.1Ti3.9Mn0.1O12 (CCMTMO) ceramic. The novelty of Mn-doped CCTO ceramic is that the tangent loss also decreases largely as compared to CCTO ceramic. The dielectric constant and tangent loss of CCMTMO ceramic 375 and 0.3 at 10 Hz temperature, respectively. CCMTMO ceramic is very useful for microelectronic devices. The polycrystalline nature of CCMTMO was to be studied with the help of X-ray diffraction (XRD), HR-SEM, HR-TEM, and Magnetic Property Measurement System (MPMS, Quantum Design). The elemental analysis and oxidation state was confirmed by (Energy Diffraction X-ray) EDX and XPS respectively. The elements were found to be their required stoichiometric and oxidation state. The impedance and modulus spectroscopy also studied.

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