Investigation of Defect Generation and Propagation in Electrically and Photonically Stressed Silicon Carbide

Abstract

A highly efficient, high-voltage power switching technology, the Optical Transconductance Varistor (OTV) is being developed based on the photoconductive property of 6H-SiC. The behavior of the dislocations in 6H-SiC under the application of voltage and laser in such devices is of particular interest. In this study, both ex-situ and in-situ synchrotron X-ray topography were applied to characterize dislocations and investigate their behaviors when the sample was electrically and photonically stressed. Threading dislocations (TDs) and basal plane dislocations (BPDs) were revealed in transmission topographs and grazing topographs. When the samples were connected to external voltage ranging from 1kV to 4kV, there were no observable signs of dislocation movement. This indicates that the energy released from the transitioning of Vanadium states is lower than the activation energy for dislocation gliding.