Abstract
Three deep acceptor levels, formed by heat-treated undoped ZnSe crystals in vacuum are found by ODLTS method. Two deep acceptor levels of them, E V + 0.30eV, E V + 0.72eV, are attributed to the deep acceptor levels related to the Cu-G and Cu-R centers, respectively, which could be produced by existence of the residual copper impurity in ZnSe crystal.
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