Abstract
The deep defects in GaAs 1− x P x ( N)/ Gap (x=0.65, 0.85) are investigated by double light sourve photocapacitance (PHCAP) method. The parameters of deep level (DL) are determined by the PHCAP spectra which are measured at the low temperature (T=100K). The nature of DL and the influence of As component on DL parameters are analyzed.
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