Abstract
The p-Si/ p-β-FeSi 2/ p-Si/ n-Si light-emitting diode (LED) was fabricated by molecular beam epitaxy (MBE) on Si(111) substrates. Compared to our previous p-Si/ p-β-FeSi 2/ n-Si double heterostructures (DH) LED, the turn-on voltage in the current–voltage ( I– V) characteristics increased by approximately 0.2 V, meaning that defect densities at around the p– n junction were reduced. However, Si-related EL (1.05 eV) became dominant unexpectedly, and thus EL of β-FeSi 2 was suppressed accordingly. The origin of the luminescence is considered to be transitions via defect levels (1.05 eV) being due probably to Fe-B complex.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
