Abstract

Copper indium selenide (CuInSe2) nanowire (NW) arrays were prepared at various electrolyte duty cycles by filling anodic alumina templates through the pulsed electrodeposition technique. X-ray diffraction and scanning electron microscopy (SEM) images showed that the nucleation mechanism of CuInSe2 NW arrays was affected by the electrodeposition duty cycle. Moreover, SEM images showed that the diameter and length of the NWs were 80nm and 2μm, respectively. Furthermore, PEDOT/CuInSe2 NW core–shell arrays were fabricated using surfactant-modified CuInSe2 NW surfaces showing the lotus effect. Transmission electron microscopy images confirmed that a core–shell structure was achieved. Current–voltage plots revealed that the CuInSe2 NW arrays were p-type semiconductors; moreover, the core–shell structure improved the diode ideality factor from 3.91 to 2.63.

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