Abstract
Cu diffusion into semi-insulating GaAs was performed at 1150°C. The PICTS spectra of the diffused GaAs show several Cu-related peaks. The height of the characteristic low-temperature peak (Cu A, T≈150 K) is proportional to the total Cu concentration determined by AES. The appearance and the peak heights of further Cu-related peaks in the spectra are obviously a function of the Cu concentration.
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