Investigation of Cu-containing low resistivity CdTe thin films deposited by the two-source evaporation technique

Abstract

Cadmium telluride (CdTe) thin films were deposited onto scratch-free transparent glass substrates by the two-source evaporation technique, using Cd and Te as two different evaporants. In the next step, films were heated under vacuum at 500 °C for 1 h and dipped in Cu(NO3)2–H2O solution at room temperature. These films were again heated under vacuum for 1 h at 500 °C to obtain maximum Cu diffusion. The samples were characterized by x-ray diffraction (XRD), scanning electron microscopy (SEM), optically by a Lambda 900 UV/VIS/NIR spectrophotometer and electrically, i.e. dc electrical resistivity, by the van der Pauw method at room temperature, dark conductivity, and activation energy analysis as a function of temperature by the two-probe method under vacuum. The EDX results showed an increase of Cu content in the samples by increasing the immersion time of the CdTe films in the solution. The layer thickness of diffused Cu atoms in CdTe is determined by comparing the difference of absorption between as-deposited and immersed films with the absorption graph of Cu films of varying thicknesses.