Abstract
It has been demonstrated that the crystallization behaviors of undoped and N-doped Ge2Sb2Te5 (GST) films can be evaluated by studying the thermomechanical behavior of the films. The crystallization temperatures (Tc) for undoped and 15 at. % N-doped GST films were determined to be about 150 and 250 °C, respectively. The activation energies for crystallization (Ea) were calculated to be 2.30, 3.29, and 3.72 eV for undoped, 10 at. % N-doped, and 15 at. % N-doped GST, respectively, by the Kissinger plot. For 15 at. % N-doped film, both the glass transition temperature (Tg) and Tc were determined to be about 150 °C, as determined by the thermomechanical characteristics.
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