Abstract
We investigate the crystal quality of ZnTe:N epilayers grown on ZnTe and GaSb substrates under various growth conditions using atomic force microscopy (AFM), transmission electron microscopy (TEM), and X-ray diffraction. Due to superior crystal quality, epilayers grown on GaSb substrates were of higher quality than those grown on ZnTe substrates. Hillocks, observed on the surfaces of ZnTe:N/ZnTe superlattice epilayers on ZnTe substrates, are the result of Te {111} fault planes emanating from the substrate and sets of Zn {111} twin planes originating at the superlattice interface. The number of dislocations at the GaSb substrate/buffer interface and corresponding ZnTe:N epilayer was significantly less than those grown on the ZnTe substrates.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
