Abstract
Chemical vapour deposition (CVD) of copper on titanium-coated substrates was performed in a stainless steel reactor using copper(I) hexafluoroacetylacetonate trimethylvinylsilane (Cu(I)hfac(TMVS)) as a precursor and nitrogen (N2) as carrier gas. Film resistivity, film composition and surface morphology were studied in relation to deposition temperature, process pressure and process gas flow ratio. The lowest resistivity value obtained was around 2 μΩcm. In addition, cross-sectional examination of the copper films, using a LEO SEM imaging system, indicated increased film porosity at higher deposition temperatures. An optimum carrier gas flow rate was determined: higher carrier gas flow rates caused excessive dilution of the copper precursor, whilst lower carrier gas flow rates weakened the transport of the copper precursor to the substrate. XRD data revealed formation of copper oxide (Cu2O) if annealing temperatures exceeded 450∘C for a period of 30 min.
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