Abstract
Effects of confining layers on optoelectronic performances including, optical output, current gain and frequency response of single quantum well transistor laser is investigated. By developing a new continuity equation, effects of drift component in addition to diffusion term, is analyzed. Simulation results show that by using graded index (GRIN) layers of Al ξ Ga 1−ξ As (ξ: 0.05➔0 in SCH1 and ξ: 0➔0.02 in SCH2) instead of GaAs in Separate Confinement Heterostructure (SCH), optical output power increases 37% and −3dB bandwidth increases to 21 GHz compared with 19 GHz in original structure.
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