Abstract
In this work, we investigate the mechanism of conductance fluctuations during continuous weight update process in analog type Resistive Random Access Memory (RRAM). With the developed Kinetic Monte Carlo (KMC) simulation method, the evolution of oxygen vacancies (V O ) distribution during resistive switching process is presented. Based on the statistical analysis of the maximum V O -V O bond cluster size, it is found that the conductance fluctuation is highly relevant to the maximum cluster size fluctuation. This can be explained based on the percolation theory. When the V O at the key location migrates under the electric field and thermal activation, the maximum cluster composed of V O - V O bond will divide, causing the change of percolation paths and conductance fluctuation.
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