Abstract
Deposition of the transparent electroconductive tin dioxide films was carried out using thermal decomposition of tetraethyltin in oxidative medium at normal and elevated pressure in the reactor of horizontal type. Investigation on the chemical composition, light transmission and electroresistance of SnO 2 films, obtained in different conditions of deposition, are reported. The special features of the etching of the pyrolytic SnO 2 films, aimed to create topological pattern for the electronic devices, were also investigated.
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