Abstract
An apparent quantum efficiency much larger than unity is observed under reverse bias voltage conditions, in hydrogenated amorphous silicon p-i-n structures. High collection efficiencies are measured for low-level probe illumination of the device n side with red light, with simultaneous bias illumination from the device p side with strongly absorbed blue light. The photogating effect responsible varies experimentally with reverse bias voltage, and collection efficiencies for the probe excitation of up to 50 are obtained. Detailed computer simulations corroborate such high values of quantum efficiency and the underlying mechanisms for the effect are revealed. We present the influence on quantum efficiency of bias light wavelength and photon flux, probe light photon flux, applied voltage, and defect density.
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