Abstract
Co is one of the candidates for a new material in the advanced generation of LSI. However, it is difficult to implement a precise analysis of surface reactions because a Co surface is unstable. In chemical mechanical planarization (CMP) and post-CMP cleaning, many surface reactions are simultaneously induced such as dissolving Co by a chelating agent, adhesion of an inhibitor, and oxidation of a Co surface. Those reactions should be controlled to establish the ideal processes of CMP and post-CMP cleaning. In this work, we performed open circuit potential (OCP) monitoring and succeeded in tracing the complicated reactions. It enabled us to compare the strengths of inhibitors and select appropriate inhibitors in a post-CMP cleaner. The measurement and analysis can be applied to not only post-CMP cleaning but also CMP.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
