Abstract

The aim of the research presented is to investigate cluster formation under pulsed laser ablation of layered semiconductors. Rapid evaporation of material provoked by high intensity laser beam creates favorable conditions for cluster formation. Films consisting of HgI2 and PbI2 nanoparticles (NP) have been prepared by pulsed N2 laser ablation. Photoetching technique was used to decrease number of large particles. There is a good agreement of theoretical prediction and observed peaks in mass spectra

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