Abstract
Chemical bath deposition of CdO thin films using three different complexing agents, namely ammonia, ethanolamine, and methylamine is investigated. CdSO 4 is used as Cd precursor, while H 2O 2 is used as an oxidation agent. As-grown films are mainly cubic CdO 2, with some Cd(OH) 2 as well as CdO phases being detected. Annealing at 400 °C in air for 1 h transforms films into cubic CdO. The calculated optical band gap of as-grown films is in the range of 3.37–4.64 eV. Annealed films have a band gap of about 2.53 eV. Rutherford backscattering spectroscopy of as-grown films reveals cadmium to oxygen ratio of 1.00:1.74 ± 0.01 while much better stoichiometry is obtained after annealing, in accordance with the X-ray diffraction results. A carrier density as high as 1.89 × 10 20 cm −3 and a resistivity as low as 1.04 × 10 −2 Ω-cm are obtained.
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