Investigation of charge trap and loss characteristics for charge trap memory by electrostatic force microscopy

Abstract

In this work, we employ the electrostatic force microscopy (EFM) technique to investigate the charge trapping and loss properties of Hf-based trapping structures by contact potential differences (CPDs) measurement. For different samples, the electron densities after injection and after 2 hours retention time are extracted from the measured CPDs. The HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> material shows higher charge trapping capability to Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> under the same condition of charge injection. The charge decay phenomenon is effectively inhibited in high-k materials with post deposition anneal (PDA) process. Meanwhile, by the introduction of the Al <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> interface, the bi-layer structure exhibits significantly improved charge trapping capability along with acceptable charge loss. The structure dependence and process dependence of the high-k materials properties are investigated.