Investigation of Cell Structure and Doping for Low-On-Resistance SiC Metal–Oxide–Semiconductor Field-Effect Transistors with Blocking Voltage of 3300 V

Abstract

We have investigated the effect of n-type doping into the junction field-effect transistor region (JFET doping) on the static characteristics of 3300-V-class 4H-SiC metal–oxide–semiconductor field-effect transistors (MOSFETs). The JFET doping technique is significantly effective in reducing the on-resistance of SiC MOSFETs without degradation of the blocking characteristics when the MOS cells are properly designed. The JFET doping reduces the temperature coefficient of the resistance in the JFET region, leading to lower on-resistance of the SiC MOSFETs at high temperatures.