Abstract
On the way towards a quantum dot (QD) based single photon emitting device operating at room temperature (RT) we investigated the electrical and optical properties of light emitting diodes (LEDs) containing single CdSe quantum dot sheets surrounded by different types of barriers. The barriers consist either of MgS layers or a combination of MgS and ZnSSe layers in order to improve the luminescence stability of the QDs at elevated temperatures. The turn-on voltages of the LEDs at RT are in the range of 4–7 V while electro-luminescence (EL) spectra show distinct QD-related emission in the green spectral region. The LEDs containing the barriers show a factor of five lower intensity compared to the reference sample without barriers due to the tunneling process of the carriers through the barriers. However, the sample with the MgS/ZnSSe barrier has a significantly higher device lifetime under constant current driving conditions compared to the samples without the ZnSSe layer.
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