Abstract
Cd doped ZnO thin films have been prepared by spray pyrolysis technique with different cadmium concentrations at temperature 400 °C. The structural, morphological and electrical properties of Cd doped ZnO films were studied. X‐ray diffraction (XRD) and Atomic Force Microscopy (AFM) measurements reveal that the films formed in polycrystalline nature and grain size, roughness of the films decreases with Cd concentration. Two probe resistivity measurements indicate that the films are semiconducting in nature up to room temperature and just above the room temperature hump shows the transition in the films. This transition is due to spin fluctuation via exchange interaction. The various characterizations clearly indicate the incorporation of Cd ion at Zn site in ZnO thin film.
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