Abstract
AbstractIn this study, we investigated the a‐Si films which were deposited by Cat‐CVD in the higher catalyzer temperature (Tcat) regime. We studied the influence of high Tcat on amorphous silicon (a‐Si:H) thin‐film properties. The information on a‐Si‐H bonding configuration was obtained by Fourier Transform Infrared Spectroscopy (FTIR). The film defect density was investigated by the electron spin resonance (ESR) as a function of Tcat, the distance between catalyzer and substrate (Dcs), and the deposition pressure (P). (© 2010 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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