Abstract
This paper presents a simulation model to predict the performance of GaAs-based betavoltaic batteries with a p–n junction structure, in which the carrier transport and collection characteristics were studied. First, the electron–hole pair generation rate in the GaAs material under the irradiation of a 63Ni source was calculated using the Monte Carlo codes. Furthermore, by simulating the energy band structure, electric field distribution, and current density distribution in batteries with the finite element analysis software COMSOL Multiphysics, we analyzed the effects of structure parameters on the output performance. Our simulation results showed that the short-circuit current density (Jsc), open-circuit voltage (Voc), maximum output power density (Pm), and energy conversion efficiency (η) of the batteries are significantly affected by the thicknesses and doping concentrations of the p-region and n-region (Hp-GaAs, Hn-GaAs, Na, and Nd). The optimized GaAs-based battery with an Hp-GaAs value of 0.1 μm, an Hn-GaAs value of 9.9 μm, an Na value of 3.98 × 1016 cm−3, and an Nd value of 1 × 1015 cm−3 can achieve a Pm value of 0.080 μW/cm2. The related Jsc, Voc, and η values are 0.234 μA/cm2, 0.49 V, and 1.55%, respectively. When the top and bottom heavily doped layers are introduced, the Pm value of the battery is enhanced by 7.5% compared to that of the battery without heavily doped layers due to the formed drift fields.
Highlights
Betavoltaic batteries using radioactive isotopes emitting beta particles have been studied for powering the micro-devices due to their long service life, high power density, and strong environmental adaptability.1,2 These batteries are composed of a semiconductor energy converter and a beta source, and their operational principle is similar to that of a photovoltaic battery
This paper presents a simulation model to predict the performance of GaAs-based betavoltaic batteries with a p–n junction structure, in which the carrier transport and collection characteristics were studied
Recent studies have shown that the transport process of beta particles in the energy conversion material can be well simulated by using the Monte Carlo codes, in which the self-absorption is considered
Summary
Betavoltaic batteries using radioactive isotopes emitting beta particles have been studied for powering the micro-devices due to their long service life, high power density, and strong environmental adaptability. These batteries are composed of a semiconductor energy converter and a beta source, and their operational principle is similar to that of a photovoltaic battery. The current–voltage (I–V) characteristics and maximum power of the batteries were determined using COMSOL Multiphysics, and the optimal diode designs are suggested According to these studies, the performance predictions of betavoltaic batteries by the device simulators are reliable and accurate. We presented a simulation model to predict the performance of GaAs-based betavoltaic batteries with a p–n junction structure, in which the carrier transport and collection characteristics were studied. The energy band structure, electric field distribution, current density distribution, and current density–voltage characteristics of the batteries were obtained, and the optimized output performances, including shortcircuit current density, open-circuit voltage, and maximum output power density, were achieved These results have guiding significance for the performance improvement, optimization design, and experimental preparation of the GaAs-based betavoltaic batteries. Our simulation model can be extended to the betavoltaic batteries with other semiconductors and radioactive isotopes
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