Abstract
Abstract The influence of the Mg concentration and lattice temperature on the carrier recombination dynamics in Zn 1− x Mg x O alloys has been studied by time-resolved photoluminescence for different emission and excitation energies. Carrier localization effects are found to play a significant role, becoming increasingly important for lower temperatures and higher Mg concentrations. Emission energy dependent dynamics were analyzed by the application of the theoretical model, yielding a characteristic localization energy of 60±15 meV for the sample with the highest Mg concentration of x =0.21.
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