Abstract
The c-axis-aligned crystalline (CAAC) rare earth gadolinium doped aluminum-zinc-oxide (Gd-AZO) thin films sputtered at room temperature are investigated in this work. It is found that the polycrystalline AZO is restructured into CAAC Gd-AZO through gadolinium doping. The X-ray diffraction spectrum and high-resolution transmission electron microscopy images indicate the (002) crystalline orientation of the local Gd-AZO grains. The film-formation mechanism of room-temperature sputtered CAAC Gd-AZO thin films is analyzed. Bottom gate oxide thin film transistors with a Gd-AZO active layer are fabricated by low temperature processes. The devices show preferable electrical properties, such as good I-V characteristics, high uniformity, and excellent bias stress stability.
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